Auger Recombination in Semiconductors

Authors

  • M. N. Alikulov Candidate of Physical and Mathematical Sciences, Associate Professor of the Department of Physics, Karshi Engineering-Economics Institute, Karshi, Uzbekistan

Keywords:

silicon, recombination, energy, momentum, impurity, semiconductor, lifetime, electron, hole, concentration

Abstract

The Auger recombinations occurring in semiconductors have been studied in this work. The theoretical and analytical data of Auger recombination processes in semiconductors with straight and complex bands are highlighted. The relationship between the rate of recombination and the structure of the bands of semiconductors has been studied. Expressions of the laws of conservation of energy and momenta are given for the processes of recombination of semiconductors with straight bands.

Downloads

Published

2021-08-09

How to Cite

Alikulov, M. N. (2021). Auger Recombination in Semiconductors. International Journal of Development and Public Policy, 1(3), 1–4. Retrieved from https://openaccessjournals.eu/index.php/ijdpp/article/view/92

Issue

Vol. 1 No. 3 (2021): August 2021

Section

Articles