Conductivity Characteristics of Acceptor-Mixed in Semiconductor in the Metal-Dielectric Boundary Region N-Zrnisn Resistance to External Influence

Authors

  • Mamatkarimov Odiljon Oxundedayevich Doctor of Physics, Mathematics, Professor
  • Kuchkarov Bekhzod Khoshimjanovich Doctor of Philosophy (PhD) in Physical and Mathematical Sciences
  • Yusufjonov Akmalkhan Abdumajid o’g’li Master student, Namangan State University, Faculty of Physics

Keywords:

lead-selenium, photosensitive

Abstract

n-ZrNiSn to study the effect of heavy duty mode (concentration of acceptors NA, donors ND (1019-1021 cm-3) on magnetic, thermoelectric, resonant and structural properties of intermetallic p-type MgAgAs structural semiconductors ra, it consists in observing that semiconductors are resistant to external influences in high temperature and concentration ranges and studying conduction mechanisms processed. This means that the sample under consideration is a solid solution. The Mott transition and the appearance of defects in semiconductors due to impact are related to the appearance of metallic conductivity in the conduction band of impurities. considered.

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Published

2023-11-30

How to Cite

Mamatkarimov Odiljon Oxundedayevich, Kuchkarov Bekhzod Khoshimjanovich, & Yusufjonov Akmalkhan Abdumajid o’g’li. (2023). Conductivity Characteristics of Acceptor-Mixed in Semiconductor in the Metal-Dielectric Boundary Region N-Zrnisn Resistance to External Influence. International Journal of Discoveries and Innovations in Applied Sciences, 3(11), 49–57. Retrieved from https://openaccessjournals.eu/index.php/ijdias/article/view/2406

Issue

Vol. 3 No. 11 (2023): November

Section

Articles